Two-electron exchange between adjacent oxygen atoms as a possible origin of the pairing in layered cuprates
Identifieur interne : 001D83 ( Main/Exploration ); précédent : 001D82; suivant : 001D84Two-electron exchange between adjacent oxygen atoms as a possible origin of the pairing in layered cuprates
Auteurs : Todor Mishonov [Bulgarie] ; Atanas Groshev [Bulgarie, Allemagne]Source :
- Physica B: Physics of Condensed Matter [ 0921-4526 ] ; 1994.
English descriptors
- Teeft :
Abstract
Abstract: We consider the two-electron exchange tunneling between the two adjacent oxygen atoms forming right angle (O(1)-O(2)) around a Cu corner in the conducting CuO2 plane. This exchange lowers the energy of the electrons. We interpret it as a BCS attraction that gives rise to pairing in layered cuprates. The model provides a natural explanation of the twining plane superconductivity and the dependence of the critical temperature on the carrier concentration. A universal behavior of the Ginzburg-Landau parameter is predicted, which can be easily checked on already existing high-Tc field-effect transistors.
Url:
DOI: 10.1016/0921-4526(94)91213-0
Affiliations:
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Le document en format XML
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<term>Detachment energy</term>
<term>Fermi energy</term>
<term>Free carriers</term>
<term>Free electron</term>
<term>Natural explanation</term>
<term>Oxygen atoms</term>
<term>Pairing</term>
<term>Pairing attraction</term>
<term>Penetration depth</term>
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<term>Theoretical physics</term>
<term>Tunneling</term>
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<front><div type="abstract" xml:lang="en">Abstract: We consider the two-electron exchange tunneling between the two adjacent oxygen atoms forming right angle (O(1)-O(2)) around a Cu corner in the conducting CuO2 plane. This exchange lowers the energy of the electrons. We interpret it as a BCS attraction that gives rise to pairing in layered cuprates. The model provides a natural explanation of the twining plane superconductivity and the dependence of the critical temperature on the carrier concentration. A universal behavior of the Ginzburg-Landau parameter is predicted, which can be easily checked on already existing high-Tc field-effect transistors.</div>
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